Charge Carriers Compensation in a Ferromagnetic Mn-Implanted Si

Secondary ions mass-spectrometry and spreading resistance profiles in the layers of a ferromagnetic Si implanted with Mn has been studied. Czochralski Si wafers both nand p-type, of highand low-resistivity, as well as a float zone Si were implanted with impurity fluencies of (1 5) x 10 16 cm -2 . The Mn impurity was found to compensate acceptors in a high-resistivity p-Si and donors in a low-resistivity n-Si. Only the small part of Mn ions in Si apparently incorporates into the Si crystal lattice, occupies the interstitial sites and the appropriate energy levels (Mni) -/0 and (Mni) +/++ equal to Ec – 0.12 eV for n-type Si and Ev + 0.32 eV for p-type Si, respectively, are activated after vacuum annealing. PACS: 61.72.uf; 71.55.Cu; 72.20.Jv